| PART |
Description |
Maker |
| MGA-425P807 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8- |
GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
|
AVAGO TECHNOLOGIES LIMITED
|
| AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP
AB 5C 5#12 PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc]
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| HMC593LP3 HMC593LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
|
Hittite Microwave Corpo...
Hittite Microwave Corporation
|
| 373LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
|
美国讯泰微波有限公司上海代表
|
| ST3403 |
P Channel Enchancement Mode MOSFET
|
STANSON[Stanson Technology]
|
| AS222-92 |
AS222-92:PHEMT GaAs IC SPDT Switch 0.1 GHz|DC-6 GHz Plastic Packaged and Chip|SPST AS222 - 92：PHEMT的砷化镓集成电路单刀双掷开.1-3千兆赫|直流- 6 GHz的塑料包装和芯片|聚苯乙烯
PHEMT GaAs IC SPDT Switch 0.1 - 3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| AS166-300 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz PHEMT的砷化镓集成电路大功率SP4T开0.1-2.5千兆
PHEMT GaAs IC High Power SP4T Switch 0.1.5 GHz
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| TGF2040 |
400 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
| TC2571 |
PHEMT GaAs Power FETs
|
Transcom
|
| TGF2025 |
250 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
